PART |
Description |
Maker |
IRFF120 IRFF121 IRFF122 IRFF123 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 5.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 50V. Continuous drain current 6.0A. N-CHANNEL ENHANCEMENT-MODE POWER MOS FIELD-EFFECT TRANSISTORS
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General Electric Solid State GE Solid State
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IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
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General Electric Solid State GE Solid State
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HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics ST Microelectronics
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ST662 ST662A ST662AB ST662ABD ST662ABN ST662AC ST6 |
From old datasheet system DC-DC CONVERTER FROM 5V TO 12V, 0.03A FOR FLASH MEMORY PROGRAMMING SUPPLY MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:14A; On-Resistance, Rds(on):9mohm; Rds(on) Test
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http:// STMICROELECTRONICS[STMicroelectronics] 意法半导
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SP8830 SP8830ADG SP8830BDG DES9157201 DES9157201AC |
1.5GHz ÷ 10 Prescaler 1.5GHz 10 Prescaler 1.5GHz ± 10 Prescaler MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:13A; On-Resistance, Rds(on):15mohm; Rds(on) Test
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Mitel Semiconductor MITEL[Mitel Networks Corporation]
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24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
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STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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2SK635 |
Drain Current ?ID=3A@ TC=25C
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Inchange Semiconductor ...
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2SK1601 |
Drain Current ?ID= 3A@ TC=25C
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Inchange Semiconductor ...
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2SK1211 |
Drain Current ?ID=2.5A@ TC=25C
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Inchange Semiconductor ...
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